Current Status Not Enrolled Price ₹1,200.00 Get Started orLogin This is an entire course for GATE and Govt. Exam’s aspirants toprepare for Electronic Devices and Circuits. It covers aomplete GATE EC syllabus of the subject. Taught by Mr. Milind Chapekar and available for one time purchase for 2 years. Course Content Semiconductors Energy Band Structure in Solids(01:09:48) Conductor Current Equation (43:03) Intrinsic Semiconductor (01:08:24) Basics of Extrinsic Semiconductors (35:18) N-type and P-type Semicondutors (49:25) Generation and Recombination of Charges (36:25) Diffusion (25:26) The Continuity Equation (13:19) Low Level Injection (35:35) Diodes Open Circuit p-n Junction (01:05:32) Depletion region: Junction Potential and Width (56:13) Forward and Reverse Biasing(41:41) Diode current equation (01:09:36) Volt-Ampere Characteristic (24:14) Diode Resistance and Capacitance (28:37) Breakdown in Diode (32:52) Bipolar Junction Transistor Basics of BJT (38:06) Active Region of Operation (43:03) Equations and expressions in Active Region (41:35) Common Base Configuration (01:12:21) CB i/p characteristics and Early Effect (53:49) Common Emitter Configuration (57:32) Field Effect Transistors Basics: Comparision with BJT, Construction, Symbol etc.(40:41) Working of FET: Ohmic Region (28:07) Working of FET: Saturation Region (54:47) Expression for Pinch-off Voltage (25:24) JFET Volt-Ampere Characteristics (15:57) MOSFETs Basics: Comparison with FET, Types of MOSFETS, Construction of n-channel EMOSFET (35:29) Basic Operation: Threshold Voltage (29:51) Basic Operation: Pinch off, Saturation and Current Curves (26:25) Transfer Characteristics of EMOSFET (08:59) Basic Operation of n-channel DMOSFET (17:09)