Electronics Device and Circuit -Mumbai University-Dec2019 - Grad Plus

Electronics Device and Circuit -Mumbai University-Dec2019

MUMBAI UNIVERSITY

Subject: Electronics Device and Circuit

Semester: 3

[Total Time: 3 Hours]
[Total Marks: 80 M]
NB: 1) Question 1 is compulsory.

2) Attempt any three questions from the rest.
3) Make any suitable assumption wherever required.


Q.1) Answer any four.

a) Explain the construction and working of Schottky diode.  [5M]

b) What do you understand by ‘Pinch off voltage’ and ‘cut off voltage’ as applied to FET.  [5M]

c) Explain in brief the re model in BJT.  [5M]

d) What is the effect of Negative feedback on bandwidth and overall gain? [5M]

e) Find frequency of oscillations for Colpitt’s oscillator with C1=0.01μF, C2=0.001μF & L=5mH.  [5M]

Q.2) a) Derive the expression for ripple factor for Full Wave Bridge Rectifier with LC filter.  [10M]

b) Compare different biasing methods of BJT and calculate the values of IBQ,  ICQ & VCEQ for the following fig. 1 shown of silicon transistor with β=100.  [10M], 73 - Grad Plus

Q.3) a) Draw & explain E-type MOSFET in detail with its input & output characteristic.  [10M]

b) For the circuit shown in fig.2 determine voltage gain, input impedance and output impedance. FET has IDSS=10mA and Vp=-4.5V.
74 - Grad Plus

Q.4) a) Draw and explain Hartley oscillator and derive an expression for its frequency of oscillation. [10M]

b) What are the advantages of negative feedback?  [5M]

c) Explain in brief various types of negative feedback amplifiers.  [5M]

Q.5) a) Explain in features of multistage RC coupled amplifier. Draw and explain two stage RC coupled transistor amplifier.  [10M]

b) Derive the expression for stability factor (S) for voltage divider biasing in transistor. [10M]

Q.6) a) Write short note on frequency response of BJT amplifier.  [10M]

b) Write short on different types of filter circuits used to remove the ripple in rectifier output. Derive the ripple factors for each.  [10M]

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