Aspiring engineers who are preparing for the Graduate Aptitude Test in Engineering (GATE) understand the significance of thorough preparation and comprehensive study resources.
Through a meticulous examination of previous years’ question papers, we aim to provide you with valuable insights, key trends, and effective strategies to excel in Communication System for your GATE exam.
GATE EC Syllabus for the Subject Communication Systems
Random Processes: auto correlation and power spectral density, properties of white noise, filtering of random signals through LTI systems.
Analog Communications: amplitude modulation and demodulation, angle modulation and demodulation, spectra of AM and FM, super heterodyne receivers.
Information Theory: entropy, mutual information and channel capacity theorem.
Digital Communications: PCM, DPCM, digital modulation schemes (ASK, PSK, FSK, QAM), bandwidth, inter-symbol interference, MAP, ML detection, matched filter receiver, SNR and BER. Fundamentals of error correction, Hamming codes, CRC.
Analysis of Previous GATE Papers for Communication Systems
| Year | Percentage of Marks |
|---|---|
| 2023 | 11% |
| 2022 | 13 % |
| 2021 | 13 % |
| 2020 | 9 % |
| 2019 | 10 % |
| 2018 | 11 % |
| 2017 | 9% |
| 2016 | 9% |
| 2015 | 8 % |
| 2014 | 10 % |
| 2013 | 9 % |
Recent GATE Paper Questions of Communication Systems
The following questions have been asked from Communication System , in GATE-EC 2023 Paper.
Q. Consider a narrow band signal, propagating in a lossless dielectric medium ( \epsilon {r}=4,\mu {r}=1 ) ,
with phase velocity v and group velocity v Which of the following statement is true? (c is the velocity of light in vacuum.)
a) vp>c , vg > c
b) vp< c, vg>c
c) vp >c, vg < c
d) vp< c , vg < c
Q. 2 The signal-to-noise ratio (SNR) of an ADC with a full-scale sinusoidal input is given to be 61.96 dB. The resolution of the ADC is _____ bits, (rounded off to the nearest integer).
Q.3. In a semiconductor device. the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 x 1019cm-3, The thermal equilibrium hole concentration in silicon at 400K is ________ x 1013 cm-3 . (rounded off to two decimal places). Given kT at 300 K is 0.026 eV.
Best Course for Communication Systems
By Dr. Varsha Sood
